New paper published!
Simone Biasco, who left the group after a PostDoc with us, published his work on studying the effects of high-field THz excitation in the low-band-gap semiconductor InSb. Numerical simulations accounting for impact ionization manage to model the experimental data.
Read the paper "Impact ionization in low-band-gap semiconductors driven by ultrafast terahertz excitation: Beyond the ballistic regime" external pagehere.